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IS610X, IS611X IS610, IS611
PHOTON COUPLED BILATERAL ANALOG FET
APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The IS610, IS611 are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level ac and dc analog signals.The IS610, IS611 are mounted in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. As a remote variable resistor l 100 to 300M l 99.9% Linearity l 15 pF Shunt Capacitance l 100G I/O Isolation Resistance As an Analog Signal Switch l Extremely low Offset Voltage l 60V pk-pk Signal Capability l No Charge Injection or Latchup l ton, toff 15s APPLICATIONS As a remote variable resistor l Isolated variable attenuator l Automatic gain control l Active filter fine tuning / band switching
OPTION SM
SURFACE MOUNT OPTION G
2.54 7.0 6.0 7.62 max. 1 2 3
Dimensions in mm 6 5 4 8.3 max. 5.1 max. 3.9 3.1 15 Max
0.5 min. 0.48
0.25
APPLICATIONS (cont.) As an Analog Signal Switch l Isolated sample and hold circuit l Multiplexed, optically isolated A/D conversion ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Breakdown Voltage Detector Current (continuous) Power Dissipation 30V 100mA 300mW 60mA 6V 100mW
8.3 max
1.2 0.6 10.2 9.5
1.4 0.9
0.26 10.16
POWER DISSIPATION Total Power Dissipation 350mW
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com
19/4/99
ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB91069AAS/A2
ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Breakdown Voltage - V( BR )46 (Note 2) Off-state Dark Current - I46 MIN TYP MAX UNITS 1.1 5 10 30 50 50 Off-state Resistance - r46 Capacitance - C46 Coupled On-state Resistance - r46 (Note 2) IS611 IS610 On-state Resistance - r64 (Note 2) IS611 IS610 300 15 1.75 V V A V nA
A pF
TEST CONDITION IF = 16mA IR = 10A VR = 5V I46 = 10A,IF = 0 V46 = 15V, IF = 0, TA= 25C V46 = 15V, IF = 0, TA = 100C V46 = 15V, IF = 0 V46 = 0, IF = 0, f = 1 MHz IF = 16mA, I46 = 100A IF = 16mA, I46 = 100A IF = 16mA, I64 = 100A IF = 16mA, I64 = 100A See note 1 See note 1 VIO = 500V (note 1) VIO= 0, f =1MHz IF= 16mA, V46 = 5V, RL = 50 IF= 16mA, f = 1kHz I46= 25A RMS
Output
(either
polarity)
170 200

170 200
Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf Turn-on Time ton Turn-off Time toff Resistance, non-linearity and asymmetry
5300 7500 1011 2 25 25 0.1
VRMS VPK pF
s s %
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
19/4/99
DB91069-AAS/A2
Forward Current vs. Ambient Temperature 80 70 Forward current I F (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Region of Linear Resistance (mV) ( A) 100 40 20 10 4 2 0 100 1000 10k 100k On-state resistance r (on) () Input Current vs. Input Voltage 100 40 Forward current I F (mA) 20 10 4 2 1 0.4 0.2 0.1 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Forward voltage VF (V)
19/4/99
On-state Resistance vs. Ambient Temperature 3 Normalized on-state resistance r (on) Normalized to IF = 16mA I46 = 25A TA = 25 C
2
1 0.8 0.6 observed range
median device
0.4 -50 -25 0 25 50 75 100 Ambient temperature TA ( C ) Normalized Off-state current vs. Ambient Temperature 100 maximum RMS voltage 40 20 maximum RMS current
Ex tra
10000
46
Maximum RMS signal voltage V
Maximum RMS signal current I
46
Normalized dark current
1000
10
100
4
po lat ed
10
2 0
Normalized to V46 = 15V IF = 0 TA = 25 C 0 25 50 75 100
1.0 Ambient temperature TA ( C ) Resistive non-linearity vs. D.C. Bias 5 Change in resistance r (on) (%) 4
TA = 75C 25C
-25C
3 2 I46 = 10A RMS r (on) = 200
1 0 0 50 100 150
200
250
300
350
D.C. bias voltage V46 (mV)
DB91069-AAS/A2

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